BCP56-10T3 Todos los transistores

 

BCP56-10T3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCP56-10T3
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 130 MHz
   Ganancia de corriente contínua (hfe): 63
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de transistor bipolar BCP56-10T3

 

BCP56-10T3 Datasheet (PDF)

 0.1. Size:69K  onsemi
nsvbcp56-10t3g.pdf

BCP56-10T3
BCP56-10T3

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

 0.2. Size:69K  onsemi
bcp56-10t3g.pdf

BCP56-10T3
BCP56-10T3

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

 5.1. Size:276K  nxp
bcp56t bcp56-10t bcp56-16t.pdf

BCP56-10T3
BCP56-10T3

BCP56T series80 V, 1 A NPN medium power transistorsRev. 3 1 July 2022 Product data sheet1. General descriptionNPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBCP56T SOT223 SC-73 BCP53TBCP56-10T BCP53-10TBCP56-16T BCP53-16T2. Features and b

 5.2. Size:151K  onsemi
bcp56-10t1g bcp56t3g.pdf

BCP56-10T3
BCP56-10T3

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

 5.3. Size:66K  onsemi
bcp56t1g bcp56-10t1g bcp56-16t1g.pdf

BCP56-10T3
BCP56-10T3

BCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON High Current: 1.0 AHIGH CURRENT TRANSISTOR The SOT-223 package can be solder

 5.4. Size:81K  onsemi
bcp56t1 bcp56t3 bcp56-10t1 bcp56-16t1 bcp56-16t1g bcp56-16t3.pdf

BCP56-10T3
BCP56-10T3

BCP56T1 SeriesPreferred DevicesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223package, which is designed for medium power surface mounthttp://onsemi.comapplications.FeaturesMEDIUM POWER NPN SILICON Pb-Free Package is AvailableHIGH CURRENT TRANSISTOR Hig

 5.5. Size:151K  onsemi
sbcp56-10t1g.pdf

BCP56-10T3
BCP56-10T3

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MA889 | 2SA1302O | 2N3865 | KT920B

 

 
Back to Top