BCR108 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCR108
Código: WHs
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 170 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: SOT23
Búsqueda de reemplazo de BCR108
- Selecciónⓘ de transistores por parámetros
BCR108 datasheet
bcr108.pdf
BCR 108 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 108 WHs Q62702-C2253 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base
bcr108s.pdf
BCR 108S NPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in on package Built in bias resistor (R1=2.2k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 108S WHs Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values U
bcr108w.pdf
BCR 108W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 108W WHs Q62702-C2275 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-ba
bcr108f.pdf
BCR108... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 k , R2=47 k ) BCR108S Two internally isolated transistors with good matching in one multichip package BCR108S For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified accord
Otros transistores... BCP628C , BCP68 , BCP68T1 , BCP68T3 , BCP69 , BCP69T1 , BCP69T3 , BCR08PN , B647 , BCR108S , BCR108W , BCR10PN , BCR112 , BCR116 , BCR116W , BCR119 , BCR119S .
History: KT604A | NSD459
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sa1283 | 2sb646 | 2sc1885 datasheet | 2sc2580 | 2sc710 | 2sc968 | 2sd217 | bdw93c equivalent




