BCR108S Todos los transistores

 

BCR108S Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCR108S

Código: WHs

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 170 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: SO363

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BCR108S datasheet

 ..1. Size:43K  siemens
bcr108s.pdf pdf_icon

BCR108S

BCR 108S NPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in on package Built in bias resistor (R1=2.2k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 108S WHs Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values U

 8.1. Size:34K  siemens
bcr108w.pdf pdf_icon

BCR108S

BCR 108W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 108W WHs Q62702-C2275 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-ba

 8.2. Size:35K  siemens
bcr108.pdf pdf_icon

BCR108S

BCR 108 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 108 WHs Q62702-C2253 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base

 8.3. Size:205K  infineon
bcr108f.pdf pdf_icon

BCR108S

BCR108... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 k , R2=47 k ) BCR108S Two internally isolated transistors with good matching in one multichip package BCR108S For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified accord

Otros transistores... BCP68 , BCP68T1 , BCP68T3 , BCP69 , BCP69T1 , BCP69T3 , BCR08PN , BCR108 , A42 , BCR108W , BCR10PN , BCR112 , BCR116 , BCR116W , BCR119 , BCR119S , BCR133 .

History: MP1555A | 2SC309

 

 

 


History: MP1555A | 2SC309

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