BCR108S Todos los transistores

 

BCR108S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCR108S
   Código: WHs
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 170 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SO363
 

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BCR108S Datasheet (PDF)

 ..1. Size:43K  siemens
 bcr108s.pdf pdf_icon

BCR108S

BCR 108SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in on package Built in bias resistor (R1=2.2k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 108S WHs Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values U

 8.1. Size:34K  siemens
 bcr108w.pdf pdf_icon

BCR108S

BCR 108WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 108W WHs Q62702-C2275 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-ba

 8.2. Size:35K  siemens
 bcr108.pdf pdf_icon

BCR108S

BCR 108NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 108 WHs Q62702-C2253 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base

 8.3. Size:205K  infineon
 bcr108f.pdf pdf_icon

BCR108S

BCR108...NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2 k, R2=47 k) BCR108S: Two internally isolated transistors with good matching in one multichip package BCR108S: For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified accord

MOSTRAR MÁS

Otros transistores... BCP68 , BCP68T1 , BCP68T3 , BCP69 , BCP69T1 , BCP69T3 , BCR08PN , BCR108 , 2N2907 , BCR108W , BCR10PN , BCR112 , BCR116 , BCR116W , BCR119 , BCR119S , BCR133 .

History: NTE97 | DTC144WSA

 

 
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