BCR10PN Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCR10PN

Código: W1s

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT363

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BCR10PN datasheet

 ..1. Size:62K  siemens
 bcr10pn.pdf pdf_icon

BCR10PN

BCR 10PN NPN/PNP Silicon Digital Tansistor Array Switching circuit, inverter, interface circuit, drive circuit Two (galvanic) internal isolated NPN/PNP Transistor in one package Built in bias resistor (R1=10k , R2=10k ) Tape loading orientation Type Marking Ordering Code Pin Configuration Package BCR 10PN W1s Q62702-C2411 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximu

 ..2. Size:527K  infineon
 bcr10pn.pdf pdf_icon

BCR10PN

BCR10PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit 4 5 3 6 Two (galvanic) internal isolated NPN/PNP 2 1 Transistors in one package Built in bias resistor NPN and PNP (R1=10 k , R2 =10 k ) C1 B2 E2 6 5 4 Pb-free (RoHS compliant) package R2 Qualified according AEC Q101 R1 TR2 TR1 R1 R2 1

 9.1. Size:43K  siemens
 bcr108s.pdf pdf_icon

BCR10PN

BCR 108S NPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in on package Built in bias resistor (R1=2.2k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 108S WHs Q62702-C2414 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values U

 9.2. Size:34K  siemens
 bcr108w.pdf pdf_icon

BCR10PN

BCR 108W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 108W WHs Q62702-C2275 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-ba

MOSTRAR MÁS

Otros transistores... BCP68T3, BCP69, BCP69T1, BCP69T3, BCR08PN, BCR108, BCR108S, BCR108W, BD333, BCR112, BCR116, BCR116W, BCR119, BCR119S, BCR133, BCR133S, BCR133W