BCR112 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCR112

Código: WFs

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 4.7 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT23

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BCR112 datasheet

 ..1. Size:35K  siemens
bcr112.pdf pdf_icon

BCR112

BCR 112 NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 112 WFs Q62702-C2254 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base

 0.1. Size:34K  siemens
bcr112w.pdf pdf_icon

BCR112

BCR 112W NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 112W WFs Q62702-C2284 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-b

 0.2. Size:834K  infineon
bcr112w.pdf pdf_icon

BCR112

BCR112... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR112 BCR112W C 3 R1 R2 1 2 B E EHA07184 Type Marking Pin Configuration Package BCR112 WFs 1=B 2=E 3=C - - - SOT23 BCR112W WFs 1=B 2=E 3=C - - - S

 9.1. Size:34K  siemens
bcr119.pdf pdf_icon

BCR112

BCR 119 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 119 WKs Q62702-C2255 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEB

Otros transistores... BCP69, BCP69T1, BCP69T3, BCR08PN, BCR108, BCR108S, BCR108W, BCR10PN, BDT88, BCR116, BCR116W, BCR119, BCR119S, BCR133, BCR133S, BCR133W, BCR135