BCR133W
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCR133W
Código: WCs
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 130
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SOT323
Búsqueda de reemplazo de transistor bipolar BCR133W
BCR133W
Datasheet (PDF)
..1. Size:34K siemens
bcr133w.pdf 
BCR 133WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k, R2=10k)Type Marking Ordering Code Pin Configuration PackageBCR 133W WCs Q62702-C2286 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
8.1. Size:43K siemens
bcr133s.pdf
BCR 133SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in one package Built in bias resistors (R1=10k, R2=10k)Type Marking Ordering Code Pin Configuration PackageBCR 133S WCs Q62702-C2376 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values
8.2. Size:35K siemens
bcr133.pdf
BCR 133NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k, R2=10k)Type Marking Ordering Code Pin Configuration PackageBCR 133 WCs Q62702-C2256 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base v
9.1. Size:35K siemens
bcr135.pdf
BCR 135NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 135 WJs Q62702-C2257 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base
9.2. Size:34K siemens
bcr135w.pdf
BCR 135WNPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=10k, R2=47K)Type Marking Ordering Code Pin Configuration PackageBCR 135W WJs Q62702-C2287 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-bas
9.3. Size:43K siemens
bcr135s.pdf
BCR 135SNPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in one package Built in bias resistor (R1=10k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 135S WJs UPON INQUIRY 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values U
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, 2SA1810B
, 2SA1810C
, 2SA1811
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.
