BCR553 Todos los transistores

 

BCR553 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCR553
   Código: XBs
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT23
 
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BCR553 Datasheet (PDF)

 ..1. Size:35K  siemens
 bcr553.pdf pdf_icon

BCR553

BCR 553PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k, R2=2.2k)Type Marking Ordering Code Pin Configuration PackageBCR 553 XBs Q62702-C2371 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base volta

 ..2. Size:525K  infineon
 bcr553.pdf pdf_icon

BCR553

BCR553PNP Silicon Digital Transistor Built in bias resistor (R1= 2.2 k, R2= 2.2 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07183Type Marking Pin Configuration PackageBCR553 XBs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage V

 9.1. Size:35K  siemens
 bcr555.pdf pdf_icon

BCR553

BCR 555PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1 = 2.2k, R2 = 10k)Type Marking Ordering Code Pin Configuration PackageBCR 555 XDs Q62702-C2383 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage

 9.2. Size:525K  infineon
 bcr555.pdf pdf_icon

BCR553

BCR555PNP Silicon Digital Transistor Built in bias resistor (R1= 2.2 k, R2= 10 k)23 Pb-free (RoHS compliant) package1 Qualified according AEC Q101C3R1R21 2B EEHA07183Type Marking Pin Configuration PackageBCR555 XDs SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit50 VCollector-emitter voltage VCEO50Collector-base voltage VC

MOSTRAR MÁS

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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