BCV26 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCV26
Código: DD_FD_FDp_FDs_FDt_FDW_ZFD
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 220 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hfe): 4000
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BCV26
BCV26 Datasheet (PDF)
bcv26 bcv46.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCV26; BCV46PNP Darlington transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationPNP Darlington transistors BCV26; BCV46FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 60 V)1 base Very high DC current gain (min
bcv26.pdf
BCV26CESOT-23BMark: FDPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 V3VCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 10 VIC Collect
bcv26 bcv46.pdf
PNP Silicon Darlington Transistors BCV 26BCV 46 For general AF applications High collector current High current gain Complementary types: BCV 27, BCV 47 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCV 26 FDs Q62702-C1493 B E C SOT-23BCV 46 FEs Q62702-C1475Maximum RatingsParameter Symbol Values UnitBCV 26 BCV 46Collector-emitter volta
bcv26 bcv46.pdf
SOT23 PNP SILICON PLANARBCV26DARLINGTON TRANSISTORSBCV46ISSUE 3 SEPTEMBER 1995 T i I EC T T V V V V T I D T I V D B V ABSOLUTE MAXIMUM RATINGS. T V V IT II V I V 8 V II i V I V V i V I V V I I 8 i II I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T V V DITI IT I I II V 8 I V
bcv26 bcv46.pdf
BCV26, BCV46PNP Silicon Darlington Transistors For general AF applications23 High collector current1 High current gain Complementary types: BCV27, BCV47 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23Maximum RatingsParameter Symbol Va
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
