DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCV26; BCV46PNP Darlington transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 23Philips Semiconductors Product specificationPNP Darlington transistors BCV26; BCV46FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 60 V)1 base Very high DC current gain (min

BCV26CESOT-23BMark: FDPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 V3VCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 10 VIC Collect

PNP Silicon Darlington Transistors BCV 26BCV 46 For general AF applications High collector current High current gain Complementary types: BCV 27, BCV 47 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCV 26 FDs Q62702-C1493 B E C SOT-23BCV 46 FEs Q62702-C1475Maximum RatingsParameter Symbol Values UnitBCV 26 BCV 46Collector-emitter volta

SOT23 PNP SILICON PLANARBCV26DARLINGTON TRANSISTORSBCV46ISSUE 3 SEPTEMBER 1995 T i I EC T T V V V V T I D T I V D B V ABSOLUTE MAXIMUM RATINGS. T V V IT II V I V 8 V II i V I V V i V I V V I I 8 i II I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T V V DITI IT I I II V 8 I V

BCV26, BCV46PNP Silicon Darlington Transistors For general AF applications23 High collector current1 High current gain Complementary types: BCV27, BCV47 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23Maximum RatingsParameter Symbol Va