BCV27 Todos los transistores

 ..1. Size:49K  philips
 bcv27 bcv47 4.pdf

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCV27; BCV47 NPN Darlington transistors 1999 Apr 08 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 FEATURES PINNING Medium current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 60 V) 1 base High DC current gain (min. 200

 ..2. Size:221K  fairchild semi
 bcv27.pdf

BCV27 C E SOT-23 B Mark FF NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V 3 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V

 ..3. Size:140K  siemens
 bcv27 bcv47.pdf

NPN Silicon Darlington Transistors BCV 27 BCV47 For general AF applications High collector current High current gain Complementary types BCV 26, BCV 46 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCV 27 FFs Q62702-C1474 B E C SOT-23 BCV 47 FGs Q62702-C1501 Maximum Ratings Parameter Symbol Values Unit BCV 27 BCV 47 Collector-emitter voltag

 ..4. Size:74K  infineon
 bcv27 bcv47.pdf

BCV27, BCV47 NPN Silicon Darlington Transistors For general AF applications 2 3 High collector current 1 High current gain Complementary types BCV26, BCV46 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Va

 ..5. Size:456K  secos
 bcv27.pdf

BCV27 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A L For general AF application high collector current 3 3 Top View C B High current gain 1 1 2 2 K E D Collector H J F G 3 Millimeter Millimeter REF. REF. 1 Min. Max. Mi

 ..6. Size:329K  htsemi
 bcv27.pdf

BCV27 TRANSISTOR (NPN) SOT 23 FEATURES High Collector Current High Current Gain MARKING FF 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V V Emitter-Base Voltage 10 V EBO I Collector Current 500 mA C P Collector Power Diss

 ..7. Size:801K  kexin
 bcv27.pdf

SMD Type Transistors NPN Darlington Transistors BCV27 (KCV27) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Medium current (max. 500 mA) B C 1 2 Low voltage (max. 60 V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 High DC current gain (min. 20 000). 1.9 -0.1 TR1 TR2 Complements to BCV26 1.Base E 2.Emitter 3.collector Absolute Maximum Rating

 ..8. Size:820K  cn shikues
 bcv27 bcv47.pdf

BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit BCV27 40 Collector Base Voltage VCBO V BCV47 80 BCV27 30 Collector Emitter Voltage VCEO V BCV47 60 Emitter Base Voltage VEBO 10 V Collector Current IC 500 mA Peak Collector Current ICM 800 mA Base Current

 0.1. Size:845K  kexin
 bcv27t.pdf

SMD Type Transistors NPN Darlington Transistors BCV27T (KCV27T) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Medium current (max. 500 mA) B C Low voltage (max. 60 V) 3 High DC current gain (min. 20 000). TR1 0.3 0.05 TR2 Complements to BCV26 +0.1 0.5 -0.1 1. Base E 2. Emitter 3. Collecter Absol