DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCV27; BCV47NPN Darlington transistors1999 Apr 08Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN Darlington transistors BCV27; BCV47FEATURES PINNING Medium current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 60 V)1 base High DC current gain (min. 200

BCV27CESOT-23BMark: FFNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 V3VCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 10 V

NPN Silicon Darlington Transistors BCV 27BCV47 For general AF applications High collector current High current gain Complementary types: BCV 26, BCV 46 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCV 27 FFs Q62702-C1474 B E C SOT-23BCV 47 FGs Q62702-C1501Maximum RatingsParameter Symbol Values UnitBCV 27 BCV 47Collector-emitter voltag

BCV27, BCV47NPN Silicon Darlington Transistors For general AF applications23 High collector current1 High current gain Complementary types: BCV26, BCV46 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23Maximum RatingsParameter Symbol Va

BCV27 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES AL For general AF application high collector current 33Top View C B High current gain 11 2 2K EDCollector H JF G3 Millimeter Millimeter REF. REF. 1 Min. Max. Mi

BCV27TRANSISTOR (NPN) SOT23 FEATURES High Collector Current High Current Gain MARKING:FF 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V V Emitter-Base Voltage 10 V EBOI Collector Current 500 mA CP Collector Power Diss

SMD Type TransistorsNPN Darlington TransistorsBCV27 (KCV27)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Medium current (max. 500 mA)B C1 2 Low voltage (max. 60 V)+0.1+0.050.95 -0.1 0.1 -0.01+0.1 High DC current gain (min. 20 000).1.9 -0.1TR1TR2 Complements to BCV261.BaseE2.Emitter3.collector Absolute Maximum Rating

BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitBCV27 40 Collector Base Voltage VCBO V BCV47 80 BCV27 30 Collector Emitter Voltage VCEO V BCV47 60 Emitter Base Voltage VEBO 10 VCollector Current IC 500 mAPeak Collector Current ICM 800 mABase Current

SMD Type TransistorsNPN Darlington TransistorsBCV27T (KCV27T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Medium current (max. 500 mA)B C Low voltage (max. 60 V)3 High DC current gain (min. 20 000).TR10.30.05TR2 Complements to BCV26+0.10.5 -0.11. BaseE2. Emitter3. Collecter Absol