BCW29 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW29
Código: C1_C1p_C1t_C1W_GC1
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO236
Búsqueda de reemplazo de transistor bipolar BCW29
BCW29 Datasheet (PDF)
bcw29 bcw30 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCW29; BCW30PNP general purpose transistors1999 Apr 13Product specificationSupersedes data of 1997 Sep 03Philips Semiconductors Product specificationPNP general purpose transistors BCW29; BCW30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS
bcw29 bcw30 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBCW29; BCW30PNP general purpose transistorsProduct data sheet 2004 Jan 13Supersedes data of 1999 Apr 13NXP Semiconductors Product data sheetPNP general purpose transistors BCW29; BCW30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS3 collector General purpose
bcw29 bcw30.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bcw29 bcw30.pdf
SOT23 PNP SILICON PLANARBCW29SMALL SIGNAL TRANSISTORSBCW30ISSUE 3 - JULY 1995 T I D T I ECB T T SOT23ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI i V I V V I V V II i i V T 8 V I I V I V I I i i V T V I
bcw29 bcw30.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBCW29BCW30SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorsMarkingPACKAGE OUTLINE DETAILSBCW29 = C1ALL DIMENSIONS IN mmBCW30 = C2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCW29 BCW30D.C. current gain at Tj = 25 C > 120 215
bcw29 bcw30.pdf
SEMICONDUCTORBCW29/30TECHNICAL DATAEPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BCW31/32_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING UNIT
bcw29 bcw30.pdf
SMD Type TransistorsPNP Transistors BCW29~BCW30 (KCW29~KCW30)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 32 V) NPN complements: BCW31 and BCW32. 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Colle
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bcw29lt1 bcw30lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW29LT1/DGeneral Purpose TransistorsBCW29LT1PNP SiliconCOLLECTORBCW30LT131BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 32 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 32 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO 5.0 Vdc
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
