BCW29 Todos los transistores

 ..1. Size:47K  philips
 bcw29 bcw30 4.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general purpose transistors 1999 Apr 13 Product specification Supersedes data of 1997 Sep 03 Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS

 ..2. Size:111K  philips
 bcw29 bcw30 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BCW29; BCW30 PNP general purpose transistors Product data sheet 2004 Jan 13 Supersedes data of 1999 Apr 13 NXP Semiconductors Product data sheet PNP general purpose transistors BCW29; BCW30 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose

 ..3. Size:309K  nxp
 bcw29 bcw30.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..4. Size:28K  diodes
 bcw29 bcw30.pdf

SOT23 PNP SILICON PLANAR BCW29 SMALL SIGNAL TRANSISTORS BCW30 ISSUE 3 - JULY 1995 T I D T I E C B T T SOT23 ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI i V I V V I V V II i i V T 8 V I I V I V I I i i V T V I

 ..5. Size:77K  cdil
 bcw29 bcw30.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P N P transistors Marking PACKAGE OUTLINE DETAILS BCW29 = C1 ALL DIMENSIONS IN mm BCW30 = C2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW29 BCW30 D.C. current gain at Tj = 25 C > 120 215

 ..6. Size:29K  kec
 bcw29 bcw30.pdf

SEMICONDUCTOR BCW29/30 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to BCW31/32 _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHARACTERISTIC SYMBOL RATING UNIT

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 bcw29 bcw30.pdf

SMD Type Transistors PNP Transistors BCW29 BCW30 (KCW29 KCW30) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 32 V) NPN complements BCW31 and BCW32. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colle

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 bcw29 bcw30 bcw61a bcw61b bcw61c bcw61d bcw67a bcw67b bcw68f bcw6bg bcw69 bcw70 bcx17 bcx18 bcx71g.pdf

 0.1. Size:451K  motorola
 bcw29lt1 bcw30lt1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW29LT1/D General Purpose Transistors BCW29LT1 PNP Silicon COLLECTOR BCW30LT1 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 32 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 32 Vdc SOT 23 (TO 236AB) Emitter Base Voltage VEBO 5.0 Vdc