Справочник транзисторов. BCW29

 

Биполярный транзистор BCW29 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BCW29
   Маркировка: C1_C1p_C1t_C1W_GC1
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.35 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Ёмкость коллекторного перехода (Cc): 7 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TO236

 Аналоги (замена) для BCW29

 

 

BCW29 Datasheet (PDF)

 ..1. Size:47K  philips
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BCW29 BCW29

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BCW29; BCW30PNP general purpose transistors1999 Apr 13Product specificationSupersedes data of 1997 Sep 03Philips Semiconductors Product specificationPNP general purpose transistors BCW29; BCW30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS

 ..2. Size:111K  philips
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BCW29 BCW29

DISCRETE SEMICONDUCTORS DATA SHEETBCW29; BCW30PNP general purpose transistorsProduct data sheet 2004 Jan 13Supersedes data of 1999 Apr 13NXP Semiconductors Product data sheetPNP general purpose transistors BCW29; BCW30FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 32 V).1 base2 emitterAPPLICATIONS3 collector General purpose

 ..3. Size:309K  nxp
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BCW29 BCW29

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..4. Size:28K  diodes
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BCW29

SOT23 PNP SILICON PLANARBCW29SMALL SIGNAL TRANSISTORSBCW30ISSUE 3 - JULY 1995 T I D T I ECB T T SOT23ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI i V I V V I V V II i i V T 8 V I I V I V I I i i V T V I

 ..5. Size:77K  cdil
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BCW29 BCW29

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBCW29BCW30SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorsMarkingPACKAGE OUTLINE DETAILSBCW29 = C1ALL DIMENSIONS IN mmBCW30 = C2Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCW29 BCW30D.C. current gain at Tj = 25 C > 120 215

 ..6. Size:29K  kec
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BCW29

SEMICONDUCTORBCW29/30TECHNICAL DATAEPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to BCW31/32_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~ 0.10CHARACTERISTIC SYMBOL RATING UNIT

 ..7. Size:926K  kexin
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BCW29 BCW29

SMD Type TransistorsPNP Transistors BCW29~BCW30 (KCW29~KCW30)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 32 V) NPN complements: BCW31 and BCW32. 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Colle

 0.1. Size:451K  motorola
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BCW29 BCW29

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW29LT1/DGeneral Purpose TransistorsBCW29LT1PNP SiliconCOLLECTORBCW30LT131BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 32 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 32 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO 5.0 Vdc

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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