BCW30LT1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW30LT1
Código: C2
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hFE): 215
Encapsulados: TO236
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BCW30LT1 datasheet
bcw29lt1 bcw30lt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW29LT1/D General Purpose Transistors BCW29LT1 PNP Silicon COLLECTOR BCW30LT1 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 32 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 32 Vdc SOT 23 (TO 236AB) Emitter Base Voltage VEBO 5.0 Vdc
bcw30lt1-d.pdf
BCW30LT1G General Purpose Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector - Emitter Voltage VCEO -32 Vdc Collector - Base Voltage VCBO -32 Vdc Emitter-Base Voltage VEBO -5.0 Vdc 3 Collector Current - Continuous IC -100
bcw30lt1g.pdf
BCW30LT1 General Purpose Transistors PNP Silicon http //onsemi.com Features Pb-Free Packages are Available COLLECTOR 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO -32 Vdc 2 EMITTER Collector - Base Voltage VCBO -32 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -100 mAdc 3 THERMAL CHARACTERISTICS Characteris
bcw30lt1g sbcw30lt1g.pdf
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Otros transistores... BCW28, BCW29, BCW29CSM, BCW29LT1, BCW29LT3, BCW29R, BCW30, BCW30CSM, TIP127, BCW30LT3, BCW30R, BCW31, BCW31CSM, BCW31LT1, BCW31LT3, BCW31R, BCW32
History: BFS36A
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