BCW31CSM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32; BCW33 NPN general purpose transistors Product data sheet 2004 Feb 06 Supersedes data of 2000 Jul 04 NXP Semiconductors Product data sheet BCW31; BCW32; NPN general purpose transistors BCW33 FEATURES PINNING Low current (100 mA) PIN DESCRIPTION Low voltage (32 V). 1 base 2 emitter APPLICATIONS 3 collector General

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification 2000 Jul 04 Supersedes data of 1999 Apr 13 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 FEATURES PINNING Low current (100 mA) PIN DESCRIPTION Low voltage (32 V). 1 base 2 emitter APPLICATIONS

BCW31 NPN General Purpose Amplifier This device is designed for general purpose applications at collector 3 currents to 300mA. Sourced from process 10. 2 SOT-23 1 Mark D1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 32 V VCBO Collector-Base Voltage 32 V VEBO Emitte

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SOT23 NPN SILICON PLANAR BCW31 BCW32 SMALL SIGNAL TRANSISTORS BCW33 ISSUE 2 - JUNE 1995 T I D T I D D D D E D D C T T B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI i V I V V I V V II i V T V I I i V I V I

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N P N transistors Marking PACKAGE OUTLINE DETAILS BCW31 = Dl ALL DIMENSIONS IN mm BCW32 = D2 BCW33 = D3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 B

SEMICONDUCTOR BCW31/32 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to BCW29/30. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00 0.10 CHARACTERISTIC SYMBOL RATING

SMD Type Transistors NPN Transistors BCW31 BCW33 (KCW31 KCW33) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Low current (100 mA) Low voltage (32 V). 1 2 PNP complements BCW29 and BCW30. +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Ba