BCW33CSM Todos los transistores

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BCW33CSM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BCW33CSM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-emisor (Vce): 20 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 300 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hfe): 420

Empaquetado / Estuche: LCC3

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BCW33CSM Datasheet (PDF)

5.1. sbcw33lt1g.pdf Size:144K _update

BCW33CSM
BCW33CSM

BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com  AEC-Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value U

5.2. bcw33lt1g.pdf Size:148K _upd

BCW33CSM
BCW33CSM

BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com  AEC-Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value U

5.3. bcw33lt3g.pdf Size:148K _upd

BCW33CSM
BCW33CSM

BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com  AEC-Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) MAXIMUM RATINGS CASE 318-08 STYLE 6 Rating Symbol Value U

5.4. bcw33lt1.pdf Size:371K _motorola

BCW33CSM
BCW33CSM

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW33LT1/D General Purpose Transistor BCW33LT1 NPN Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER MAXIMUM RATINGS CASE 31808, STYLE 6 Rating Symbol Value Unit SOT23 (TO236AB) CollectorEmitter Voltage VCEO 20 Vdc CollectorBase Voltage VCBO 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 1

5.5. bcw31 bcw32 bcw33 2.pdf Size:112K _philips

BCW33CSM
BCW33CSM

DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32; BCW33 NPN general purpose transistors Product data sheet 2004 Feb 06 Supersedes data of 2000 Jul 04 NXP Semiconductors Product data sheet BCW31; BCW32; NPN general purpose transistors BCW33 FEATURES PINNING Low current (100 mA) PIN DESCRIPTION Low voltage (32 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose s

5.6. bcw31 bcw32 bcw33.pdf Size:49K _philips

BCW33CSM
BCW33CSM

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification 2000 Jul 04 Supersedes data of 1999 Apr 13 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 FEATURES PINNING Low current (100 mA) PIN DESCRIPTION Low voltage (32 V). 1 base 2 emitter APPLICATIONS 3 col

5.7. bcw33.pdf Size:85K _fairchild_semi

BCW33CSM
BCW33CSM

BCW33 NPN General Purpose Amplifier This device is designed for general purpose applications at collector 3 currents to 300mA. Sourced from process 07. 2 SOT-23 1 Mark: D3 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 32 V VCBO Collector-Base Voltage 32 V VEBO Emitter-Base V

5.8. bcw31 bcw32 bcw33.pdf Size:27K _diodes

BCW33CSM

SOT23 NPN SILICON PLANAR BCW31 BCW32 SMALL SIGNAL TRANSISTORS BCW33 ISSUE 2 - JUNE 1995 T I D T I D D D D E D D C T T B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI i V I V V I V V II i V T V I I i V I V I I i

5.9. bcw33lt1-d.pdf Size:257K _onsemi

BCW33CSM
BCW33CSM

BCW33LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO 32 Vdc 2 Collector - Base Voltage VCBO 32 Vdc EMITTER Emitter - Base Voltage VEBO 5.0 Vdc 3 Collector Current - Continuous IC 100 mAdc TH

5.10. bcw31 bcw32 bcw33.pdf Size:77K _cdil

BCW33CSM
BCW33CSM

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking PACKAGE OUTLINE DETAILS BCW31 = Dl ALL DIMENSIONS IN mm BCW32 = D2 BCW33 = D3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 BCW3

5.11. bcw31 bcw32 bcw33.pdf Size:895K _kexin

BCW33CSM
BCW33CSM

SMD Type Transistors NPN Transistors BCW31~BCW33 (KCW31~KCW33) SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Low current (100 mA) ● Low voltage (32 V). 1 2 ● PNP complements: BCW29 and BCW30. +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Ba

Otros transistores... BCW31LT3 , BCW31R , BCW32 , BCW32CSM , BCW32LT1 , BCW32LT3 , BCW32R , BCW33 , BC548B , BCW33LT1 , BCW33LT3 , BCW33R , BCW34 , BCW35 , BCW36 , BCW37 , BCW38 .

 


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