BCW33R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW33LT1/DGeneral Purpose TransistorBCW33LT1NPN SiliconCOLLECTOR313BASE122EMITTERMAXIMUM RATINGSCASE 31808, STYLE 6Rating Symbol Value UnitSOT23 (TO236AB)CollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current

DISCRETE SEMICONDUCTORS DATA SHEETBCW31; BCW32; BCW33NPN general purpose transistorsProduct data sheet 2004 Feb 06Supersedes data of 2000 Jul 04NXP Semiconductors Product data sheetBCW31; BCW32; NPN general purpose transistorsBCW33FEATURES PINNING Low current (100 mA)PIN DESCRIPTION Low voltage (32 V).1 base2 emitterAPPLICATIONS3 collector General

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCW31; BCW32; BCW33NPN general purpose transistorsProduct specification 2000 Jul 04Supersedes data of 1999 Apr 13Philips Semiconductors Product specificationNPN general purpose transistors BCW31; BCW32; BCW33FEATURES PINNING Low current (100 mA)PIN DESCRIPTION Low voltage (32 V).1 base2 emitterAPPLICATIONS

BCW33NPN General Purpose Amplifier This device is designed for general purpose applications at collector 3currents to 300mA. Sourced from process 07.2SOT-231Mark: D31. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 32 VVCBO Collector-Base Voltage 32 VVEBO Emitte

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

SOT23 NPN SILICON PLANAR BCW31BCW32SMALL SIGNAL TRANSISTORSBCW33ISSUE 2 - JUNE 1995 T I D T I D D D D E D D C T T BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI i V I V V I V V II i V T V I I i V I V I

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT-23(TO-236)MAXIMUM RATINGSCASE 318-08STYLE 6Rating Symbol Value UnitC

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U

BCW33LT1General Purpose TransistorNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector - Emitter Voltage VCEO 32 VdcCollector - Base Voltage VCBO 32 Vdc2Emitter - Base Voltage VEBO 5.0 Vdc EMITTERCollector Current - Continuous IC 100 mAdcTHERMAL CHARACTERISTICSCharacteristic Symb

BCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector - Emitter Voltage VCEO 32 Vdc2Collector - Base Voltage VCBO 32 VdcEMITTEREmitter - Base Voltage VEBO 5.0 Vdc3Collector Current - Continuous IC 100 mAd

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U

BCW33LT1G, SBCW33LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23(TO-236)MAXIMUM RATINGS CASE 318-08STYLE 6Rating Symbol Value U

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCW31 BCW32BCW33SILICON PLANAR EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSBCW31 = DlALL DIMENSIONS IN mmBCW32 = D2BCW33 = D3Pin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSBCW31 BCW32 B

SMD Type TransistorsNPN TransistorsBCW31~BCW33 (KCW31~KCW33)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Low current (100 mA) Low voltage (32 V).1 2 PNP complements: BCW29 and BCW30.+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba