BCW61RB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW61BLT1/D BCW61BLT1 General Purpose Transistors BCW61CLT1 PNP Silicon COLLECTOR BCW61DLT1 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 32 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 32 Vdc Emitter Base Voltage VEB

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW61 series PNP general purpose transistors Product specification 1999 Apr 12 Supersedes data of 1997 May 28 Philips Semiconductors Product specification PNP general purpose transistors BCW61 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BCW61 series PNP general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 May 28 NXP Semiconductors Product data sheet PNP general purpose transistors BCW61 series FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 32 V). 1 base 2 emitter APPLICATIONS 3 coll

BCW61A/B/C/D General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -100 mA PC Collector Power Dissipation 350 mW

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Collector Dissipation PC 350 mW Storage Temperature TSTG -55 150 Refer to KS5086 for grap

PNP Silicon AF Transistors BCW 61 BCX 71 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BCW 60, BCX 70 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BCW 61 A BAs Q62702-C452 B E C SOT-23 BCW 61 B BBs Q62702-C1585 BCW 61 C BCs Q62702

BCW61..., BCX71... PNP Silicon AF Transistors For AF input stages and driver applications 2 3 High current gain 1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package BCW61A BAs 1=B 2=E 3=C

BCW61..., BCX71... PNP Silicon AF Transistors For AF input stages and driver applications 2 3 High current gain 1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCW61A BAs 1=B 2=E 3=C SO

BCW61C -0.1A , -32V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low current A L Low voltage 3 3 Top View C B MARKING 1 1 2 BC 2 K E D PACKAGE INFORMATION Collector H J F G 3 Package MPQ Leader Size Millimeter Millimeter REF. REF. Min. Ma

BCW61B -0.1A , -32V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low current A L Low voltage 3 3 Top View C B MARKING 1 1 2 BB 2 K E D PACKAGE INFORMATION Collector H J F G 3 Package MPQ Leader Size Millimeter Millimeter REF. REF. Min. M

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P N P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC PACKAGE OUTLINE DETAILS BCW61D = BD ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUT

BCW61B SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low current Low voltage AXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO -32 V Collector-Emitter Voltage VCEO -32 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage IC Collector Current -Continuous -0.

BCW61C SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low current Low voltage AXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO -32 V Collector-Emitter Voltage VCEO -32 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage IC Collector Current -Continuous -0.1

SMD Type Transistors PNP Transistors BCW61 (KCW61) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Low current Low voltage General Purpose Transistor 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -32 Collector - Emi