BCW65A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW65A
Código: EA_EAs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 32 V
Tensión colector-emisor (Vce): 32 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BCW65A
BCW65A Datasheet (PDF)
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageBCW65A, BCW65BBCW65CGENERAL PURPOSE TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSBCW65A = EAALL DIMENSIONS IN mmBCW65B = EBBCW65C = ECPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGS BCW65A 65B 65CC
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lbcw65alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBCW65ALT1GFeatruesS-LBCW65ALT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmit
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