BCW66 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW66
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BCW66
BCW66 Datasheet (PDF)
bcw66.pdf
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BCW66SMALL SIGNAL NPN TRANSISTORSType MarkingBCW66F EFBCW66G EGBCW66H EH SILICON EPITAXIAL PLANAR NPN2TRANSISTORS MINIATURE PLASTIC PACKAGE FOR3APPLICATION IN SURFACE MOUNTING1CIRCUITS MEDIUM CURRENT AF AMPLIFICATIONSOT-23AND SWITCHING PNP COMPLEMENT IS BCW68INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter
bcw65 bcw66.pdf
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NPN Silicon AF Transistors BCW 65BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 67, BCW 68 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCW 65 A EAs Q62702-C1516 B E C SOT-23BCW 65 B EBs Q62702-C1612BCW 65 C ECs Q62702-C1479BCW 66 F EFs Q62702-C1892BCW 66 G EGs Q627
bcw65 bcw66.pdf
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SOT23 NPN SILICON PLANARBCW65MEDIUM POWER TRANSISTORSBCW66ISSUE 3 - AUGUST 1995. T I D T I V V EC V T BV T T SOT23 8ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V V i II I 8 V II I V V I V Di i i T V i T T T V V V V V V V V BCW65BCW66ELECTRICAL CHARACTERISTICS (at Tamb = 25
bcw66.pdf
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BCW66NPN Silicon AF Transistors For general AF applications23 High current gain1 Low collector-emitter saturation voltage Complementary type: BCW68 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B 2=E 3=C SOT23 BCW66
bcw66.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23BCW66 TRANSISTOR (NPN)FEATURES 1. BASE Complementary to BCW682. EMITTER3. COLLECTORBCW66 is subdivided into three groups F,G and H according to DC current gainMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 75 V CBOVCEO
bcw66.pdf
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SMD Type TransistorsNPN TransistorsBCW66 (KCW66)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 BCW66 is subdivided into three groups F,G and H according to DC current gain Complementary to BCW68 1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto
bcw66g.pdf
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BCW66GNPN General Purpose Amplifier This device is designed for general purpose amplifier applications at 3collector currents to 500mA. Sourced from process 13.2SOT-231Mark: EG1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 75 V
bcw66f bcw66g bcw66h.pdf
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BCW66 series45 V, 800 mA NPN general-purpose transistorRev. 1 21 April 2017 Product data sheet1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.PNP complements: BCW68F/G/H2 Features and benefits High current AEC-Q101 qualified3 Applications General-purpose switching and amplification4
bcw66h.pdf
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A Product Line ofDiodes IncorporatedBCW66H45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 45V Case: SOT23 IC = 800mA High Continuous Collector Current Case Material: molded plastic, Green molding compound Low Saturation Voltage VCE(sat)
bcw66k.pdf
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BCW66KNPN Silicon AF Transistors For general AF applications23 High current gain1 Low collector-emitter saturation voltage Complementary type: BCW68 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW66KF EFs 1=B 2=E 3=C SOT23 BCW66KG EGs 1=B 2=E 3=C SOT23 BCW66KH EHs 1=B 2=E 3=C SOT23Maximu
bcw66f.pdf
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BCW66FFeatures Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die ConstructionNPN Small Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximu
bcw66h.pdf
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BCW66HFeatures Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die ConstructionNPN Small Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum R
sbcw66glt1g.pdf
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BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin
bcw66glt1g.pdf
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BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin
bcw66glt1-d.pdf
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BCW66GLT1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO 45 VdcCollector-Base Voltage VCBO 75 Vdc3Emitter-Base Voltage VEBO 5.0 VdcSOT-23CASE 318Collector Current - Continuo
bcw66glt1g sbcw66glt1g.pdf
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BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant SOT-23(TO-236)CASE 318 STYLE 6MAXIMUM RATINGSCOLLECTORRating Symbol Va
bcw66f g h.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageBCW66F, BCW66GBCW66HGENERAL PURPOSE TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSBCW 66F = EF ALL DIMENSIONS IN mmBCW 66G = EGBCW 66H = EHPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGS BCW66F 66G 66H
bcw66glt1.pdf
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FM120-M WILLASBCW66GLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesNPN Silicon Batch process design, excellent power dissipation offers better reverse leakage current and the We declare that the material of product rmal resistance. SOD-123H Low profile
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