BCW66SMALL SIGNAL NPN TRANSISTORSType MarkingBCW66F EFBCW66G EGBCW66H EH SILICON EPITAXIAL PLANAR NPN2TRANSISTORS MINIATURE PLASTIC PACKAGE FOR3APPLICATION IN SURFACE MOUNTING1CIRCUITS MEDIUM CURRENT AF AMPLIFICATIONSOT-23AND SWITCHING PNP COMPLEMENT IS BCW68INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter

NPN Silicon AF Transistors BCW 65BCW 66 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 67, BCW 68 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BCW 65 A EAs Q62702-C1516 B E C SOT-23BCW 65 B EBs Q62702-C1612BCW 65 C ECs Q62702-C1479BCW 66 F EFs Q62702-C1892BCW 66 G EGs Q627

SOT23 NPN SILICON PLANARBCW65MEDIUM POWER TRANSISTORSBCW66ISSUE 3 - AUGUST 1995. T I D T I V V EC V T BV T T SOT23 8ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V V i II I 8 V II I V V I V Di i i T V i T T T V V V V V V V V BCW65BCW66ELECTRICAL CHARACTERISTICS (at Tamb = 25

BCW66NPN Silicon AF Transistors For general AF applications23 High current gain1 Low collector-emitter saturation voltage Complementary type: BCW68 (PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageBCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B 2=E 3=C SOT23 BCW66

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23BCW66 TRANSISTOR (NPN)FEATURES 1. BASE Complementary to BCW682. EMITTER3. COLLECTORBCW66 is subdivided into three groups F,G and H according to DC current gainMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 75 V CBOVCEO

SMD Type TransistorsNPN TransistorsBCW66 (KCW66)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 BCW66 is subdivided into three groups F,G and H according to DC current gain Complementary to BCW68 1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

BCW66GNPN General Purpose Amplifier This device is designed for general purpose amplifier applications at 3collector currents to 500mA. Sourced from process 13.2SOT-231Mark: EG1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 75 V

BCW66 series45 V, 800 mA NPN general-purpose transistorRev. 1 21 April 2017 Product data sheet1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.PNP complements: BCW68F/G/H2 Features and benefits High current AEC-Q101 qualified3 Applications General-purpose switching and amplification4

A Product Line ofDiodes IncorporatedBCW66H45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 45V Case: SOT23 IC = 800mA High Continuous Collector Current Case Material: molded plastic, Green molding compound Low Saturation Voltage VCE(sat)

BCW66KNPN Silicon AF Transistors For general AF applications23 High current gain1 Low collector-emitter saturation voltage Complementary type: BCW68 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCW66KF EFs 1=B 2=E 3=C SOT23 BCW66KG EGs 1=B 2=E 3=C SOT23 BCW66KH EHs 1=B 2=E 3=C SOT23Maximu

BCW66FFeatures Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die ConstructionNPN Small Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximu

BCW66HFeatures Ideally Suited for Automatic Insertion Low Current, Low Voltage Epitaxial Planar Die ConstructionNPN Small Halogen Free. "Green" Device (Note 1) Moisture Sensitivity Level 1Signal Transistor Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum R

BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin

BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin

BCW66GLT1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO 45 VdcCollector-Base Voltage VCBO 75 Vdc3Emitter-Base Voltage VEBO 5.0 VdcSOT-23CASE 318Collector Current - Continuo

BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant SOT-23(TO-236)CASE 318 STYLE 6MAXIMUM RATINGSCOLLECTORRating Symbol Va

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageBCW66F, BCW66GBCW66HGENERAL PURPOSE TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSBCW 66F = EF ALL DIMENSIONS IN mmBCW 66G = EGBCW 66H = EHPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGS BCW66F 66G 66H

FM120-M WILLASBCW66GLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesNPN Silicon Batch process design, excellent power dissipation offers better reverse leakage current and the We declare that the material of product rmal resistance. SOD-123H Low profile