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BCW66G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCW66G
   Código: EG_EGs
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: SOT23
 

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BCW66G Datasheet (PDF)

 ..1. Size:46K  fairchild semi
bcw66g.pdf pdf_icon

BCW66G

BCW66GNPN General Purpose Amplifier This device is designed for general purpose amplifier applications at 3collector currents to 500mA. Sourced from process 13.2SOT-231Mark: EG1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 75 V

 ..2. Size:294K  nxp
bcw66f bcw66g bcw66h.pdf pdf_icon

BCW66G

BCW66 series45 V, 800 mA NPN general-purpose transistorRev. 1 21 April 2017 Product data sheet1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.PNP complements: BCW68F/G/H2 Features and benefits High current AEC-Q101 qualified3 Applications General-purpose switching and amplification4

 0.1. Size:103K  onsemi
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BCW66G

BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin

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History: KRA757F | 2SB365 | TN4889 | TN2369 | BDX91 | DTA205 | CJD340

 

 
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