BCW66G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW66G
Código: EG_EGs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BCW66G
BCW66G Datasheet (PDF)
bcw66g.pdf
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BCW66GNPN General Purpose Amplifier This device is designed for general purpose amplifier applications at 3collector currents to 500mA. Sourced from process 13.2SOT-231Mark: EG1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VVCBO Collector-Base Voltage 75 V
bcw66f bcw66g bcw66h.pdf
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BCW66 series45 V, 800 mA NPN general-purpose transistorRev. 1 21 April 2017 Product data sheet1 General descriptionNPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.PNP complements: BCW68F/G/H2 Features and benefits High current AEC-Q101 qualified3 Applications General-purpose switching and amplification4
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sbcw66glt1g.pdf
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BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin
bcw66glt1g.pdf
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BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23Compliant*(TO-236)CASE 318-08 STYLE 6MAXIMUM RATINGSCOLLECTORRatin
bcw66glt1-d.pdf
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BCW66GLT1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR31BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO 45 VdcCollector-Base Voltage VCBO 75 Vdc3Emitter-Base Voltage VEBO 5.0 VdcSOT-23CASE 318Collector Current - Continuo
bcw66glt1g sbcw66glt1g.pdf
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BCW66GLT1G,SBCW66GLT1GGeneral Purpose TransistorNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant SOT-23(TO-236)CASE 318 STYLE 6MAXIMUM RATINGSCOLLECTORRating Symbol Va
bcw66glt1.pdf
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FM120-M WILLASBCW66GLT1THRUGeneral Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesNPN Silicon Batch process design, excellent power dissipation offers better reverse leakage current and the We declare that the material of product rmal resistance. SOD-123H Low profile
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