BCW66G Specs and Replacement
Type Designator: BCW66G
SMD Transistor Code: EG_EGs
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SOT23
BCW66G Substitution
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BCW66G datasheet
BCW66G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at 3 collector currents to 500mA. Sourced from process 13. 2 SOT-23 1 Mark EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCBO Collector-Base Voltage 75 V ... See More ⇒
BCW66 series 45 V, 800 mA NPN general-purpose transistor Rev. 1 21 April 2017 Product data sheet 1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complements BCW68F/G/H 2 Features and benefits High current AEC-Q101 qualified 3 Applications General-purpose switching and amplification 4... See More ⇒
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BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 Compliant* (TO-236) CASE 318-08 STYLE 6 MAXIMUM RATINGS COLLECTOR Ratin... See More ⇒
Detailed specifications: BCW65BLT1, BCW65C, BCW65CLT1, BCW65RA, BCW65RB, BCW65RC, BCW66, BCW66F, 9014, BCW66H, BCW66RA, BCW66RB, BCW66RF, BCW66RG, BCW66RH, BCW67, BCW67A
Keywords - BCW66G pdf specs
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