BCX53-6 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCX53-6
Código: AJ
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 25 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: SOT89
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BCX53-6 datasheet
bcp53 bcp53-10 bcp53-16 bcx53 bcx53-10 bcx53-16 bc53pa bc53-10pa bc53-16pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bcx51 bcx51-16 bcx52 bcx52-16 bcx53 bcx53-10 bcx53-16.pdf
BCX51...-BCX53... PNP Silicon AF Transistors 1 For AF driver and output stages 2 High collector current 3 2 Low collector-emitter saturation voltage Complementary types BCX54...BCX56 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCX51 AA 1=B 2=C 3=E SOT89 BCX51-16 AD 1=B 2=C 3=E SOT89 BCX52 AE
bcx53 bcx53-10 bcx53-16.pdf
BCX53,BCX53-10,BCX53-16 Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO -100 IC=-100 A, IE=0 Collector-Base Breakdown Voltage V V(BR)CEO -80 IC=-10mA, IB=0 Collector-Emitter Breakdown Voltage(Note4) V V(BR)EBO -5 IE=-100 A, IC=0 Emitter-Base Breakdown Voltage V ICBO VCB=-30V, IE=0 Collector Cutoff Current A
bcx53-16-au.pdf
PBCX53-16-AU PNP Low Vce(sat) Transistor SOT-89 Unit inch(mm) Voltage -100V -1A Current Features Silicon PNP epitaxial type Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA High collector current capability Excellent DC current gain characteristics AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61
Otros transistores... BCX51-6, BCX52, BCX52-10, BCX52-16, BCX52-6, BCX53, BCX53-10, BCX53-16, 2SC945, BCX54, BCX54-10, BCX54-16, BCX54-6, BCX55, BCX55-10, BCX55-16, BCX55-6
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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