BCX53-6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCX53-6
Código: AJ
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 25 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT89
- Selección de transistores por parámetros
BCX53-6 Datasheet (PDF)
bcp53 bcp53-10 bcp53-16 bcx53 bcx53-10 bcx53-16 bc53pa bc53-10pa bc53-16pa.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bcx51 bcx51-16 bcx52 bcx52-16 bcx53 bcx53-10 bcx53-16.pdf

BCX51...-BCX53...PNP Silicon AF Transistors1 For AF driver and output stages2 High collector current 32 Low collector-emitter saturation voltage Complementary types: BCX54...BCX56 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCX51 AA 1=B 2=C 3=E SOT89 BCX51-16 AD 1=B 2=C 3=E SOT89 BCX52 AE
bcx53 bcx53-10 bcx53-16.pdf

BCX53,BCX53-10,BCX53-16Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO -100IC=-100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO -80IC=-10mA, IB=0Collector-Emitter Breakdown Voltage(Note4) VV(BR)EBO -5IE=-100A, IC=0Emitter-Base Breakdown Voltage VICBO VCB=-30V, IE=0Collector Cutoff Current A
bcx53-16-au.pdf

PBCX53-16-AU PNP Low Vce(sat) Transistor SOT-89 Unit: inch(mm) Voltage -100V -1A Current Features Silicon PNP epitaxial type Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA High collector current capability Excellent DC current gain characteristics AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BFG195 | STC4250F | KSC2859Y | BUS23BF | P13003D | 159NT1V | DRA3143X
History: BFG195 | STC4250F | KSC2859Y | BUS23BF | P13003D | 159NT1V | DRA3143X



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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