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BCX53-6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCX53-6
   Código: AJ
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 25 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT89
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BCX53-6 Datasheet (PDF)

 8.1. Size:1259K  nxp
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BCX53-6

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.2. Size:520K  infineon
bcx51 bcx51-16 bcx52 bcx52-16 bcx53 bcx53-10 bcx53-16.pdf pdf_icon

BCX53-6

BCX51...-BCX53...PNP Silicon AF Transistors1 For AF driver and output stages2 High collector current 32 Low collector-emitter saturation voltage Complementary types: BCX54...BCX56 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCX51 AA 1=B 2=C 3=E SOT89 BCX51-16 AD 1=B 2=C 3=E SOT89 BCX52 AE

 8.3. Size:874K  mcc
bcx53 bcx53-10 bcx53-16.pdf pdf_icon

BCX53-6

BCX53,BCX53-10,BCX53-16Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO -100IC=-100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO -80IC=-10mA, IB=0Collector-Emitter Breakdown Voltage(Note4) VV(BR)EBO -5IE=-100A, IC=0Emitter-Base Breakdown Voltage VICBO VCB=-30V, IE=0Collector Cutoff Current A

 8.4. Size:342K  panjit
bcx53-16-au.pdf pdf_icon

BCX53-6

PBCX53-16-AU PNP Low Vce(sat) Transistor SOT-89 Unit: inch(mm) Voltage -100V -1A Current Features Silicon PNP epitaxial type Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA High collector current capability Excellent DC current gain characteristics AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BFG195 | STC4250F | KSC2859Y | BUS23BF | P13003D | 159NT1V | DRA3143X

 

 
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