BCX70GLT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BCX70GLT1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 125 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar BCX70GLT1

BCX70GLT1 Datasheet (PDF)

6.1. Size:427K motorola
bcx70glt bcx70jlt bcx70klt.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCX70GLT1/DBCX70GLT1General Purpose TransistorsNPN SiliconBCX70JLT1COLLECTOR3BCX70KLT11BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 45 VdcCASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO 5.0

8.1. Size:75K fairchild semi
bcx70g.pdf

BCX70GGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag

8.2. Size:125K nxp
bcx70g bcx70h bcx70j bcx70k.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBCX70 seriesNPN general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetNPN general purpose transistors BCX70 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpos

8.3. Size:20K samsung
bcx70g.pdf

BCX70G NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Refer to KS5088 for graphs1. Base 2. Em

8.4. Size:82K cdil
bcx70g h j k.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BCX70G BCX70HBCX70J BCX70KSILICON PLANAR EPITAXIAL TRANSISTORSNPN silicon transistorsMarkingPACKAGE OUTLINE DETAILSBCX70G = AGALL DIMENSIONS IN mmBCX70H = AHBCX70J = AJBCX70K = AKPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOL

8.5. Size:10717K sprague
bcw31 bcw32 bcw33 bcw60a bcw60b bcw60c bcw60d bcw65a bcw65b bcw66f bcw66g bcw71 bcw72 bcx19 bcx20 bcx70g.pdf