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BCX70RG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCX70RG
   Código: AU_ZG
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.31 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 125 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23
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BCX70RG Datasheet (PDF)

 9.1. Size:427K  motorola
bcx70glt bcx70jlt bcx70klt.pdf pdf_icon

BCX70RG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCX70GLT1/DBCX70GLT1General Purpose TransistorsNPN SiliconBCX70JLT1COLLECTOR3BCX70KLT11BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 45 VdcCASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO 5.0

 9.2. Size:125K  philips
bcx70.pdf pdf_icon

BCX70RG

DISCRETE SEMICONDUCTORS DATA SHEETBCX70 seriesNPN general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetNPN general purpose transistors BCX70 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpos

 9.3. Size:48K  philips
bcx70 3.pdf pdf_icon

BCX70RG

DISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCX70 seriesNPN general purpose transistors1999 Apr 15Product specificationSupersedes data of 1997 Mar 14Philips Semiconductors Product specificationNPN general purpose transistors BCX70 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3

 9.4. Size:75K  fairchild semi
bcx70j.pdf pdf_icon

BCX70RG

BCX70JGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: ZTX302M | NSVF4009SG4

 

 
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