BD132A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD132A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 11 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 60 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO126
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BD132A datasheet
bd132.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD132 PNP power transistor 1997 Mar 04 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP power transistor BD132 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 collector, c
bd131-bd132.pdf
PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage 45 V -VCBO Collector-Base Voltage 45 V -VEBO Emitter-Base Voltage 4 V Symbol Ratings Value Unit -IC 3 IC
bd131 bd132.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS NPN BD131 PNP BD132 TO-126 Plastic Package E C B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD131 BD132 UNIT Collector -Base Voltage VCBO V 70 45 Collector -Emitter Voltage VCEO V 45 45 Emitter-Base Voltage
Otros transistores... BD127 , BD128 , BD129 , BD130 , BD130Y , BD131 , BD131A , BD132 , TIP32C , BD133 , BD135 , BD135-10 , BD135-16 , BD135-6 , BD135G , BD136 , BD136-10 .
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