DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD132PNP power transistor1997 Mar 04Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP power transistor BD132FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 collector, c

PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORSThe BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit-VCEO Collector-Emitter Voltage 45 V-VCBO Collector-Base Voltage 45 V-VEBO Emitter-Base Voltage 4 VSymbol Ratings Value Unit-IC 3 IC

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON EPITAXIAL POWER TRANSISTORSNPNBD131PNPBD132TO-126 Plastic PackageECBGeneral Purpose Medium Power ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD131 BD132 UNITCollector -Base Voltage VCBO V70 45Collector -Emitter Voltage VCEO V45 45Emitter-Base Voltage

isc Silicon PNP Power Transistor BD132ESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage -: V = -45V(Min.)(BR)CEOComplement to type BD131Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25