BD176-10 Todos los transistores

 9.1. Size:40K  fairchild semi
 bd176 bd178 bd180.pdf

BD176/178/180 Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage BD176 - 45 V BD178 - 60 V BD180 - 80 V VCEO Collector-Emitter Voltage BD176 -

 9.2. Size:217K  cdil
 bd175 bd176 bd177 bd178 bd179 bd180.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD176 EPITAXIAL SILICON POWER TRANSISTORS BD175 BD178 BD177 BD180 BD179 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 BD179 UNIT BD176 BD178 BD180 Collector -Emitter Voltage VCE

 9.3. Size:122K  shantou-huashan
 hsbd176.pdf

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD176 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation Tc=25

 9.4. Size:213K  inchange semiconductor
 bd176.pdf

isc Silicon PNP Power Transistor BD176 DESCRIPTION DC Current Gain- h = 40-250(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -45V(Min) CEO(SUS) Complement to type BD175 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS

 9.5. Size:124K  inchange semiconductor
 bd176 bd178 bd180.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD176 BD178 BD180 DESCRIPTION With TO-126 package Complement to type BD175 /177 /179 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER COND