BD178-10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BD178-10
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 135 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 63
   Paquete / Cubierta: TO126

Búsqueda de reemplazo de transistor bipolar BD178-10

BD178-10 Datasheet (PDF)

9.1. Size:40K fairchild semi
bd176 bd178 bd180.pdf

BD176/178/180Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO *Collector-Base Voltage : BD176 - 45 V : BD178 - 60 V : BD180 - 80 V VCEO Collector-Emitter Voltage : BD176 -

9.2. Size:217K cdil
bd175 bd176 bd177 bd178 bd179 bd180.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBD176 EPITAXIAL SILICON POWER TRANSISTORS BD175BD178BD177BD180BD179NPN PNPTO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD175 BD177 BD179 UNITBD176 BD178 BD180Collector -Emitter Voltage VCE

9.3. Size:123K shantou-huashan
hsbd178.pdf

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD178 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

9.4. Size:213K inchange semiconductor
bd178.pdf

isc Silicon PNP Power Transistor BD178DESCRIPTIONDC Current Gain-: h = 40-250(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -60V(Min)CEO(SUS)Complement to type BD177Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS

9.5. Size:124K inchange semiconductor
bd176 bd178 bd180.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD176 BD178 BD180 DESCRIPTION With TO-126 package Complement to type BD175 /177 /179 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER COND

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N122 | 2N1136 | BC490A

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050