All Transistors. BD178-10 Datasheet

 

BD178-10 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD178-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: TO126

 BD178-10 Transistor Equivalent Substitute - Cross-Reference Search

   

BD178-10 Datasheet (PDF)

 9.1. Size:40K  fairchild semi
bd176 bd178 bd180.pdf

BD178-10
BD178-10

BD176/178/180Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO *Collector-Base Voltage : BD176 - 45 V : BD178 - 60 V : BD180 - 80 V VCEO Collector-Emitter Voltage : BD176 -

 9.2. Size:217K  cdil
bd175 bd176 bd177 bd178 bd179 bd180.pdf

BD178-10
BD178-10

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBD176 EPITAXIAL SILICON POWER TRANSISTORS BD175BD178BD177BD180BD179NPN PNPTO126 Plastic PackageECBIntended for use in Medium Power Linear Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD175 BD177 BD179 UNITBD176 BD178 BD180Collector -Emitter Voltage VCE

 9.3. Size:123K  shantou-huashan
hsbd178.pdf

BD178-10

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HSBD178 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25

 9.4. Size:213K  inchange semiconductor
bd178.pdf

BD178-10
BD178-10

isc Silicon PNP Power Transistor BD178DESCRIPTIONDC Current Gain-: h = 40-250(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -60V(Min)CEO(SUS)Complement to type BD177Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS

 9.5. Size:124K  inchange semiconductor
bd176 bd178 bd180.pdf

BD178-10
BD178-10

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD176 BD178 BD180 DESCRIPTION With TO-126 package Complement to type BD175 /177 /179 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER COND

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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