BD230-16 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD230-16
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar BD230-16
BD230-16 Datasheet (PDF)
bd230.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD230NPN power transistor1999 Apr 21Product specificationSupersedes data of 1997 Mar 06Philips Semiconductors Product specificationNPN power transistor BD230FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mou
bd226 bd228 bd230.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD226/228/230 DESCRIPTION DC Current Gain- : hFE= 40(Min)@ IC= 0.15A Complement to Type BD227/229/231 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD226 45 VCBO Collector-Base Voltage BD228 60 V B
bd230.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD230 DESCRIPTION With TO-126 package Complement to type BD231 High current (Max:1.5A) Low voltage (Max: 80V) APPLICATIONS Drive stage in TV circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAM
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
