BD235 Datasheet. Equivalente

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 bd235 bd237.pdf

BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications 1 Audio, power linear and switching applications 2 3 SOT-32 Description (TO-126) The devices are manufactured in Planar technology with Base Island layout. The Figure 1. Internal schematic diagram resulting transistor shows exceptional high gain perfo

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 bd235 bd236 bd237 bd238.pdf

BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM A

 ..3. Size:38K  fairchild semi
 bd233 bd235 bd237.pdf

BD233/235/237 Medium Power Linear and Switching Applications Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD233 45 V BD235 60 V BD237 100 V VCEO Collector-Emitter Voltage BD233 45 V

 ..4. Size:486K  cdil
 bd233 bd234 bd235 bd236 bd237 bd238.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD233 BD234 BD235 BD236 BD237 BD238 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS BD233 BD235 BD237 DESCRIPTION SYMBOL UNIT BD234 BD236 BD238 Collector Base Voltage VCBO 45 60

 ..5. Size:2383K  jiangsu
 bd233 bd235 bd237.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233 / BD235 / BD237 TRANSISTOR (NPN) TO-126 FEATURES Complement to BD234/BD236/BD238 respectively 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit BD233 BD235 BD237 XX XX XX BD233,BD235,BD237=Device code Solid dot = Green molding compound device, if none, the normal

 ..6. Size:222K  lge
 bd233 bd235 bd237.pdf

BD233/235/237(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 Complement to BD 234/236/238 respectively 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 Collector-Base Voltage BD233 45 VCBO V BD235 60 BD237

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 bd233 bd235 bd237.pdf

BD233/235/237 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol BD233 BD235 BD237 Unit VCBO 45 60 100 V Collector-Emitter Voltage VCEO 45 60 80 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 5.0 V Collector Current IC 2.0 A PD 1.25 W Power Disspation Tj 150 C J

 ..8. Size:188K  inchange semiconductor
 bd233 bd235 bd237.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD233/235/237 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 0.15A FE C Complement to Type BD234/236/238 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in 5 10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABS