All Transistors. BD235 Datasheet

 

BD235 Datasheet, Equivalent, Cross Reference Search

Type Designator: BD235

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO126

BD235 Transistor Equivalent Substitute - Cross-Reference Search

 

BD235 Datasheet (PDF)

1.1. bd235 bd236 bd237 bd238.pdf Size:75K _st

BD235
BD235

BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSO

1.2. bd235 bd237.pdf Size:226K _st

BD235
BD235

BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications 1 Audio, power linear and switching applications 2 3 SOT-32 Description (TO-126) The devices are manufactured in Planar technology with Base Island layout. The Figure 1. Internal schematic diagram resulting transistor shows exceptional high gain performance couple

1.3. bd233 bd235 bd237.pdf Size:38K _fairchild_semi

BD235
BD235

BD233/235/237 Medium Power Linear and Switching Applications Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD233 45 V : BD235 60 V : BD237 100 V VCEO Collector-Emitter Voltage : BD233 45 V : BD23

1.4. bd233 bd234 bd235 bd236 bd237 bd238.pdf Size:486K _cdil

BD235
BD235

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD233 BD234 BD235 BD236 BD237 BD238 NPN PNP TO126 Plastic Package E C B Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS BD233 BD235 BD237 DESCRIPTION SYMBOL UNIT BD234 BD236 BD238 Collector Base Voltage VCBO 45 60 10

1.5. bd233 bd235 bd237.pdf Size:117K _inchange_semiconductor

BD235
BD235

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type BD234 /236 /238 APPLICATIONS Ў¤ For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD233 BD235 BD237 Ў¤ Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO

1.6. bd233 bd235 bd237.pdf Size:181K _wietron

BD235
BD235

BD233/235/237 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol BD233 BD235 BD237 Unit VCBO 45 60 100 V Collector-Emitter Voltage VCEO 45 60 80 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 5.0 V Collector Current IC 2.0 A PD 1.25 W Power Disspation Tj 150 ?C Juncti

Datasheet: BD233-16 , BD233-6 , BD233G , BD234 , BD234-10 , BD234-16 , BD234-6 , BD234G , 2SC2078 , BD235-10 , BD235-16 , BD235-6 , BD235G , BD236 , BD236-10 , BD236-16 , BD236-6 .

 


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