BD241C Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD241C
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 115 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TO220
Búsqueda de reemplazo de BD241C
BD241C PDF detailed specifications
bd241b bd241c bd242b bd242c.pdf
Order this document MOTOROLA by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B Complementary Silicon Plastic BD241C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD242B Collector Emitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc BD242C* Collector Emitter Sustaining Voltage VCEO(sus) = 80 V... See More ⇒
bd241a bd241c.pdf
BD241A BD241C NPN power transistors . Features NPN transistors Applications Audio, general purpose switching and amplifier transistors 3 2 1 Description TO-220 The devices are manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain Figure 1. Internal schematic diagram performance coupled with very low sa... See More ⇒
bd241 bd241a bd241b bd241c.pdf
BD241/A/B/C Medium Power Linear and Switching Applications Complement to BD242/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage BD241 45 V BD241A 60 V BD241B 80 V BD241C 100 V VCER Collector-Emitter Voltage ... See More ⇒
Otros transistores... BD240B , BD240C , BD240D , BD240E , BD240F , BD241 , BD241A , BD241B , BC557 , BD241D , BD241E , BD241F , BD242 , BD242A , BD242B , BD242C , BD242D .
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