BD241C - описание и поиск аналогов

Order this document MOTOROLA by BD241B/D SEMICONDUCTOR TECHNICAL DATA NPN BD241B Complementary Silicon Plastic BD241C* Power Transistors PNP . . . designed for use in general purpose amplifier and switching applications. BD242B Collector Emitter Saturation Voltage VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc BD242C* Collector Emitter Sustaining Voltage VCEO(sus) = 80 V

BD241A BD241C NPN power transistors . Features NPN transistors Applications Audio, general purpose switching and amplifier transistors 3 2 1 Description TO-220 The devices are manufactured in Planar technology with Base Island layout. The resulting transistor shows exceptional high gain Figure 1. Internal schematic diagram performance coupled with very low sa

BD241/A/B/C Medium Power Linear and Switching Applications Complement to BD242/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage BD241 45 V BD241A 60 V BD241B 80 V BD241C 100 V VCER Collector-Emitter Voltage

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY High Current Gain - Bandwidth Product SILICON Compact TO-220 AB Package 3 AMP Epoxy Meets UL94 V-0 @ 0.125 in 80-100 VOLTS These Devices are Pb-F

isc Silicon NPN Power Transistor BD241/A/B/C DESCRIPTION DC Current Gain -h = 25(Min)@ I = 1.0A FE C Collector-Emitter Sustaining Voltage- V = 45V(Min)- BD241; 60V(Min)- BD241A CEO(SUS) 80V(Min)- BD241B; 100V(Min)- BD241C Complement to Type BD242/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gene

BD241CFP COMPLEMENTARY SILICON POWER TRANSISTOR FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN 3 transistor mounted in TO-220FP fully molded 2 1 isolated package. It is inteded for power linear and switching TO-220FP applications. INTER

BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http //onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY Collector-Emitter Saturation Voltage - SILICON VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc 3 AMP Collector-Emitter Sustaining Voltage - 80-100 VOLTS VCEO(sus)