BD245B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD245B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BD245B
BD245B Datasheet (PDF)
bd245 bd245a bd245b bd245c.pdf
isc Silicon NPN Power Transistor BD245/A/B/CDESCRIPTIONCollector Current -I = 10ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)- BD245; 60V(Min)- BD245A(BR)CEO80V(Min)- BD245B; 100V(Min)- BD245CComplement to Type BD246/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power
bd245-a-b-c.pdf
BD245, BD245A, BD245B, BD245CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD246 Series 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute max
bd245.pdf
BD245, BD245A, BD245B, BD245CNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGEBD246 Series(TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector Current 15 A Peak Collector Current 2C Customer-Specified Selections Available3EPin 2 is in
bd245 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl
bd245d.pdf
isc Silicon NPN Power Transistor BD245DDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h >40@I = 1AFE CCollector-Emitter Saturation Voltage-: V )= 1 V(Max)@ I = 3ACE(sat CDesigned for Complementary Use with the BD246DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: NA41UI | D100P | 2SB1033 | BSY84
History: NA41UI | D100P | 2SB1033 | BSY84
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050