BD245B Datasheet and Replacement

isc Silicon NPN Power Transistor BD245/A/B/CDESCRIPTIONCollector Current -I = 10ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)- BD245; 60V(Min)- BD245A(BR)CEO80V(Min)- BD245B; 100V(Min)- BD245CComplement to Type BD246/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power

BD245, BD245A, BD245B, BD245CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD246 Series 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute max

BD245, BD245A, BD245B, BD245CNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGEBD246 Series(TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector Current 15 A Peak Collector Current 2C Customer-Specified Selections Available3EPin 2 is in

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl

isc Silicon NPN Power Transistor BD245DDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h >40@I = 1AFE CCollector-Emitter Saturation Voltage-: V )= 1 V(Max)@ I = 3ACE(sat CDesigned for Complementary Use with the BD246DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching