BD245E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD245E

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO218

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BD245E datasheet

 9.1. Size:84K  bourns
 bd245-a-b-c.pdf pdf_icon

BD245E

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) BD246 Series 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max

 9.2. Size:91K  power-innovations
 bd245.pdf pdf_icon

BD245E

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGE BD246 Series (TOP VIEW) 80 W at 25 C Case Temperature B 1 10 A Continuous Collector Current 15 A Peak Collector Current 2 C Customer-Specified Selections Available 3 E Pin 2 is in

 9.3. Size:203K  inchange semiconductor
 bd245 a b c.pdf pdf_icon

BD245E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl

 9.4. Size:216K  inchange semiconductor
 bd245 bd245a bd245b bd245c.pdf pdf_icon

BD245E

isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION Collector Current -I = 10A C Collector-Emitter Breakdown Voltage- V = 45V(Min)- BD245; 60V(Min)- BD245A (BR)CEO 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power

MOSTRAR MÁS

Otros transistores... BD244D, BD244E, BD244F, BD245, BD245A, BD245B, BD245C, BD245D, 2SD2499, BD245F, BD246, BD246A, BD246B, BD246C, BD246D, BD246E, BD246F