BD245E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD245E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BD245E
BD245E Datasheet (PDF)
bd245-a-b-c.pdf
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BD245, BD245A, BD245B, BD245CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD246 Series 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute max
bd245.pdf
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BD245, BD245A, BD245B, BD245CNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGEBD246 Series(TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector Current 15 A Peak Collector Current 2C Customer-Specified Selections Available3EPin 2 is in
bd245 a b c.pdf
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl
bd245 bd245a bd245b bd245c.pdf
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isc Silicon NPN Power Transistor BD245/A/B/CDESCRIPTIONCollector Current -I = 10ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)- BD245; 60V(Min)- BD245A(BR)CEO80V(Min)- BD245B; 100V(Min)- BD245CComplement to Type BD246/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power
bd245d.pdf
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isc Silicon NPN Power Transistor BD245DDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h >40@I = 1AFE CCollector-Emitter Saturation Voltage-: V )= 1 V(Max)@ I = 3ACE(sat CDesigned for Complementary Use with the BD246DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .