BD245E Datasheet, Equivalent, Cross Reference Search
Type Designator: BD245E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO218
BD245E Transistor Equivalent Substitute - Cross-Reference Search
BD245E Datasheet (PDF)
bd245-a-b-c.pdf
BD245, BD245A, BD245B, BD245CNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD246 Series 80 W at 25C Case TemperatureB1 10 A Continuous Collector CurrentC 2 15 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute max
bd245.pdf
BD245, BD245A, BD245B, BD245CNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the SOT-93 PACKAGEBD246 Series(TOP VIEW) 80 W at 25C Case TemperatureB1 10 A Continuous Collector Current 15 A Peak Collector Current 2C Customer-Specified Selections Available3EPin 2 is in
bd245 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION Collector Current -IC= 10A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C Complement to Type BD246/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching appl
bd245 bd245a bd245b bd245c.pdf
isc Silicon NPN Power Transistor BD245/A/B/CDESCRIPTIONCollector Current -I = 10ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)- BD245; 60V(Min)- BD245A(BR)CEO80V(Min)- BD245B; 100V(Min)- BD245CComplement to Type BD246/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power
bd245d.pdf
isc Silicon NPN Power Transistor BD245DDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h >40@I = 1AFE CCollector-Emitter Saturation Voltage-: V )= 1 V(Max)@ I = 3ACE(sat CDesigned for Complementary Use with the BD246DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
