BD250 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD250
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 55 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 40 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO218
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BD250 datasheet
bd250 bd250a bd250b bd250c.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION Collector Current -I = -25A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD250; -60V(Min)- BD250A (BR)CEO -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE
bd250 a b c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C DESCRIPTION With TO-3PN package Complement to type BD249/A/B/C 125 W at 25 C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat
bd250 bd250a bd250b bd250c.pdf
isc Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION Collector Current -I = -25A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD250; -60V(Min)- BD250A (BR)CEO -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose
Otros transistores... BD246F, BD249, BD249A, BD249B, BD249C, BD249D, BD249E, BD249F, 2222A, BD250A, BD250B, BD250C, BD250D, BD250E, BD250F, BD251, BD253
History: 2N6057 | BD249D | BC123Y | 2N6047 | BD251 | BC122W
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