2N2857QF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2857QF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.04 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1000 MHz

Capacitancia de salida (Cc): 1 pF

Ganancia de corriente contínua (hFE): 45

Encapsulados: LCC6

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2N2857QF datasheet

 8.1. Size:433K  rca
 2n2857.pdf pdf_icon

2N2857QF

 8.2. Size:62K  central
 2n2857 2n3839.pdf pdf_icon

2N2857QF

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 8.3. Size:197K  semelab
 2n2857c1b.pdf pdf_icon

2N2857QF

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

 8.4. Size:196K  semelab
 2n2857c1.pdf pdf_icon

2N2857QF

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

MOSTRAR MÁS

Otros transistores... 2N2855-2, 2N2855-3, 2N2856, 2N2856-1, 2N2856-2, 2N2856-3, 2N2857, 2N2857CSM, BD222, 2N2857UB, 2N2858, 2N2859, 2N285A, 2N285B, 2N2860, 2N2861, 2N2862