2N2858 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N2858

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.6 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 80 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO5

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2N2858 datasheet

 9.1. Size:433K  rca
2n2857.pdf pdf_icon

2N2858

 9.2. Size:62K  central
2n2857 2n3839.pdf pdf_icon

2N2858

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.3. Size:197K  semelab
2n2857c1b.pdf pdf_icon

2N2858

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

 9.4. Size:196K  semelab
2n2857c1.pdf pdf_icon

2N2858

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt

Otros transistores... 2N2856, 2N2856-1, 2N2856-2, 2N2856-3, 2N2857, 2N2857CSM, 2N2857QF, 2N2857UB, 2SC5200, 2N2859, 2N285A, 2N285B, 2N2860, 2N2861, 2N2862, 2N2863, 2N2864