2N2858 Specs and Replacement

Type Designator: 2N2858

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

 2N2858 Substitution

- BJT ⓘ Cross-Reference Search

 

2N2858 datasheet

 9.1. Size:433K  rca

2n2857.pdf pdf_icon

2N2858

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 9.2. Size:62K  central

2n2857 2n3839.pdf pdf_icon

2N2858

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

 9.3. Size:197K  semelab

2n2857c1b.pdf pdf_icon

2N2858

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒

 9.4. Size:196K  semelab

2n2857c1.pdf pdf_icon

2N2858

SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product (fT) Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 30V VCEO Collector Emitt... See More ⇒

Detailed specifications: 2N2856, 2N2856-1, 2N2856-2, 2N2856-3, 2N2857, 2N2857CSM, 2N2857QF, 2N2857UB, 2SC5200, 2N2859, 2N285A, 2N285B, 2N2860, 2N2861, 2N2862, 2N2863, 2N2864

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