BD302 Todos los transistores

 

BD302 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD302
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 55 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO220
 

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BD302 Datasheet (PDF)

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 bd302.pdf pdf_icon

BD302

isc Silicon PNP Power Transistor BD302DESCRIPTIONDC Current Gain -: h = 30(Min.)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -45V(Min.)(BR)CEOComplement to Type BD301Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages up to 25W, verticaldeflection circuits in color TV receiver

 0.1. Size:2049K  1
 cjbd3020.pdf pdf_icon

BD302

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFETCJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.33.3-8L-B9.5m@10V30 V20A14.5m@4.5VDESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

 0.2. Size:2049K  jiangsu
 cjbd3020.pdf pdf_icon

BD302

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFETCJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.33.3-8L-B9.5m@10V30 V20A14.5m@4.5VDESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

Otros transistores... BD292 , BD293 , BD294 , BD295 , BD296 , BD301 , BD301A , BD301B , D209L , BD302A , BD302B , BD303 , BD303A , BD303B , BD304 , BD304A , BD304B .

History: 2SD2180

 

 
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