BD302 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD302
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 55 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO220
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BD302 datasheet
bd302.pdf
isc Silicon PNP Power Transistor BD302 DESCRIPTION DC Current Gain - h = 30(Min.)@ I = -3A FE C Collector-Emitter Breakdown Voltage- V = -45V(Min.) (BR)CEO Complement to Type BD301 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages up to 25W, vertical deflection circuits in color TV receiver
cjbd3020.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L-B 9.5m @10V 30 V 20A 14.5m @4.5V DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
cjbd3020.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L-B 9.5m @10V 30 V 20A 14.5m @4.5V DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
Otros transistores... BD292 , BD293 , BD294 , BD295 , BD296 , BD301 , BD301A , BD301B , 8550 , BD302A , BD302B , BD303 , BD303A , BD303B , BD304 , BD304A , BD304B .
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