BD302 Specs and Replacement
Type Designator: BD302
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO220
BD302 Substitution
- BJT ⓘ Cross-Reference Search
BD302 datasheet
isc Silicon PNP Power Transistor BD302 DESCRIPTION DC Current Gain - h = 30(Min.)@ I = -3A FE C Collector-Emitter Breakdown Voltage- V = -45V(Min.) (BR)CEO Complement to Type BD301 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages up to 25W, vertical deflection circuits in color TV receiver... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L-B 9.5m @10V 30 V 20A 14.5m @4.5V DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L-B 9.5m @10V 30 V 20A 14.5m @4.5V DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications... See More ⇒
Detailed specifications: BD292, BD293, BD294, BD295, BD296, BD301, BD301A, BD301B, 8550, BD302A, BD302B, BD303, BD303A, BD303B, BD304, BD304A, BD304B
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