BD302 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD302
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
BD302 Transistor Equivalent Substitute - Cross-Reference Search
BD302 Datasheet (PDF)
bd302.pdf
isc Silicon PNP Power Transistor BD302DESCRIPTIONDC Current Gain -: h = 30(Min.)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -45V(Min.)(BR)CEOComplement to Type BD301Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages up to 25W, verticaldeflection circuits in color TV receiver
cjbd3020.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFETCJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.33.3-8L-B9.5m@10V30 V20A14.5m@4.5VDESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
cjbd3020.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFETCJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.33.3-8L-B9.5m@10V30 V20A14.5m@4.5VDESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
