BD302B Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD302B
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 55 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 3 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO220
Búsqueda de reemplazo de BD302B
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BD302B datasheet
cjbd3020.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L-B 9.5m @10V 30 V 20A 14.5m @4.5V DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
cjbd3020.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L-B 9.5m @10V 30 V 20A 14.5m @4.5V DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
bd302.pdf
isc Silicon PNP Power Transistor BD302 DESCRIPTION DC Current Gain - h = 30(Min.)@ I = -3A FE C Collector-Emitter Breakdown Voltage- V = -45V(Min.) (BR)CEO Complement to Type BD301 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages up to 25W, vertical deflection circuits in color TV receiver
Otros transistores... BD294 , BD295 , BD296 , BD301 , BD301A , BD301B , BD302 , BD302A , TIP42 , BD303 , BD303A , BD303B , BD304 , BD304A , BD304B , BD306 , BD306A .
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