BD302B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD302B
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 55 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BD302B
BD302B Datasheet (PDF)
cjbd3020.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFETCJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.33.3-8L-B9.5m@10V30 V20A14.5m@4.5VDESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
cjbd3020.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFETCJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.33.3-8L-B9.5m@10V30 V20A14.5m@4.5VDESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
bd302.pdf
isc Silicon PNP Power Transistor BD302DESCRIPTIONDC Current Gain -: h = 30(Min.)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -45V(Min.)(BR)CEOComplement to Type BD301Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages up to 25W, verticaldeflection circuits in color TV receiver
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
