BD302B pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BD302B Specs and Replacement

Type Designator: BD302B

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 55 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220

BD302B Substitution

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BD302B datasheet

9.1. Size:2049K 1

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L-B Plastic-Encapsulate MOSFETS N-Channel Power MOSFET CJBD3020 ID V(BR)DSS RDS(on)TYP PD F NWB3.3 3.3-8L-B 9.5m @10V 30 V 20A 14.5m @4.5V DESCRIPTION The CJBD3020 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications... See More ⇒

9.2. Size:2049K jiangsu

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9.3. Size:210K inchange semiconductor

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isc Silicon PNP Power Transistor BD302 DESCRIPTION DC Current Gain - h = 30(Min.)@ I = -3A FE C Collector-Emitter Breakdown Voltage- V = -45V(Min.) (BR)CEO Complement to Type BD301 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages up to 25W, vertical deflection circuits in color TV receiver... See More ⇒

Detailed specifications: BD294, BD295, BD296, BD301, BD301A, BD301B, BD302, BD302A, TIP42, BD303, BD303A, BD303B, BD304, BD304A, BD304B, BD306, BD306A