BD376 Todos los transistores

 

BD376 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD376

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO126

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BD376 datasheet

 ..1. Size:42K  fairchild semi
 bd376 bd378 bd380.pdf pdf_icon

BD376

BD376/378/380 Medium Power Linear and Switching Applications Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD376 - 50 V BD378 - 75 V BD380 - 100 V VCEO Collector-Emitter Voltage B

 ..2. Size:51K  samsung
 bd376 bd378 bd380.pdf pdf_icon

BD376

BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD376 VCBO - 50 V . BD378 - 75 V BD380 - 100 V Collector Emitter Voltage BD376 VCEO - 45 V 1. Emitter 2.Collector 3.Base BD378 - 60

 ..3. Size:157K  inchange semiconductor
 bd376 bd378 bd380 .pdf pdf_icon

BD376

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION DC Current Gain- hFE= 20(Min)@ IC= -1A Complement to Type BD375/377/379 APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD376 -50 VCBO Collector-Base Voltage BD378 -75

 ..4. Size:214K  inchange semiconductor
 bd376 bd378 bd380.pdf pdf_icon

BD376

isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION DC Current Gain- h = 20(Min)@ I = -1A FE C Complement to Type BD375/377/379 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT BD376 -50 V Col

MOSTRAR MÁS

Otros transistores... BD373D-10 , BD373D-16 , BD373D-6 , BD375 , BD375-10 , BD375-16 , BD375-25 , BD375-6 , 13007 , BD376-10 , BD376-16 , BD376-25 , BD376-6 , BD377 , BD377-10 , BD377-16 , BD377-25 .

 

 

 


 
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