BD433-16 Todos los transistores

 

BD433-16 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD433-16
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 36 W
   Tensión colector-base (Vcb): 22 V
   Tensión colector-emisor (Vce): 22 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO126
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BD433-16 Datasheet (PDF)

 9.1. Size:73K  st
bd433 bd435 bd437 bd434 bd436 bd438.pdf pdf_icon

BD433-16

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.The BD433 is especially suitable for use in12car-radio output

 9.2. Size:51K  st
bd433 bd434 bd435 bd436 bd437 bd438.pdf pdf_icon

BD433-16

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.12The BD433 is especially suitable for use in3car

 9.3. Size:44K  fairchild semi
bd433 bd435 bd437.pdf pdf_icon

BD433-16

BD433/435/437Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD433 22 V: BD435 32 V: BD437 45 V VCES Collector-Emitter Voltage: BD433

 9.4. Size:57K  samsung
bd433 bd435 bd437.pdf pdf_icon

BD433-16

BD433/435/437 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHINGTO-126APPLICATIONS Complement to BD434, BD436 and BD438 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD433 VCBO 22 V: BD435 32 V: BD437 45 V Collector Emitter Voltage : BD433 VCES 22 V: BD435 32 V1. Emitter 2.Collector 3.Base: BD437 45 V

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BD402 | 40968 | 41501 | BFR71 | MRF342 | MRF9411BLT3

 

 
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